MOSFET anchor: I_D(V_GS=V_T)=0; I_D(V_GS=2·V_T)=K·V_T²/2

Layer 1 — Physicsin the engineering-physics subtree

Sympy-exact witness of the MOSFET-saturation anchor identities. Setup: I_D = (K/2)·(V_GS - V_T)² as a three-symbol polynomial. Identity 1 (threshold, V_GS = V_T): I_D = (K/2)·0² = 0 — the onset of conduction, canonical cutoff boundary. …

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