Mott-Cabrera 1948-1949: thin-oxide-film growth limited by tunneling-current of electrons through oxide; rate eq d/dt = A exp(-t/tau); explains why protective oxides self-limit at ~5 nm thickness (Al2O3, Cr2O3).
Mott-Cabrera 1948-1949: thin-oxide-film growth limited by tunneling-current of electrons through oxide; rate eq d/dt = A exp(-t/tau); explains why protective oxides self-limit at ~5 nm thickness (Al2O3, Cr2O3).