spintronics

Layer 1 — Physics6 concepts in this subtree

Electronic transport that exploits the spin degree of freedom in addition to charge. Foundational: Mott 1936 two-current model of spin-polarised conduction in ferromagnets; Julliere 1975 tunneling-magnetoresistance ratio between parallel…

GMR: ρ_AP − ρ_P = 4β²ρ*λ_sf/L-dependent — parallel/antiparallel resistance difference
Spin-transfer torque: J_s > J_c ⇒ precessional switching of free-layer magnetisation
Spin-Hall effect: J_c → J_s transverse — intrinsic + skew + side-jump mechanisms
Julliere TMR ratio: (R_AP − R_P)/R_P = 2 P₁P₂ / (1 − P₁P₂)
Spin-Hall angle: θ_SH = σ_SH / σ_xx — charge-to-spin-current conversion efficiency
Mott two-current model: ρ_P ~ parallel of (ρ_↑ ∥ ρ_↓), both low; ρ_AP ~ series
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